Our site saves small pieces of text information (cookies) on your device in order to deliver better content and for statistical purposes. You can disable the usage of cookies by changing the settings of your browser. By browsing our site without changing the browser settings you grant us permission to store that information on your device.
L. S. CHUAH1,* , Z. HASSAN1, H. ABU HASSAN1
In this work, the structure of the InN films has been determined by means of conventional XRD phase analysis ω/2θ scan. Characteristics of the as-deposited (Ni, Ag, and Ni/Ag) metal contact on indium nitride (InN) have been studied. Specific contact resistivity, ρc (SCR) was determined using transmission line method (TLM). The bilayer contact produced the lowest SCR. For this reason, different annealing temperatures (400 °C-700 °C) in nitrogen gas ambient and durations (1-30 minutes) are investigated for Ni/Ag metal contacts, as thermally stable metal-semiconductor contacts are essential for high quality devices. Annealing in nitrogen gas ambient is believed to avoid nitrogen vacancies which act as donors. The electrical behavior of each condition is compared. For relatively different annealing temperatures, substantial difference of the SCR values is observed between different durations samples. Scanning electron microscopy (SEM) measurements were carried out on the as-deposited, and annealed contacts where the surface morphology of each of these conditions was compared.
Specific contact resistivity, Indium nitride, Ohmic contact, Annealing.
L. S. CHUAH, Z. HASSAN, H. ABU HASSAN, Comparative study of characteristics in Ni, Ag and Ni/Ag metal contact schemes on n-type InN layer, Optoelectronics and Advanced Materials - Rapid Communications, 1, 10, October 2007, pp.523-527 (2007).
Submitted at: Aug. 8, 2007
Accepted at: Aug. 30, 2007
Optoelectronics and Advanced Materials - Rapid Communications
(2024): Impact Factor = 0.4 - Journal Citation Reports (Clarivate Analytics, 2025)
Active accounts were imported to the new platform and assigned a random password by default. In order to access your account you need to access the login page and go through the Lost Password dialog (involves the system sending you an email with instructions) in order to reset your password. This step is necessary as passwords are kept in hashed form and the new platform uses modern hashing algorithms incompatible with the previous ones.