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Co-thermal evaporation: a new method to deposit telluride films

E. BARTHÉLÉMY1, C. VIGREUX-BERCOVICI1,* , P. YOT1, A. PRADEL1

Affiliation

  1. Equipe Physicochimie des Matériaux Désordonnés et Poreux, Institut Charles Gerhardt, UMR 5253, Université Montpellier II, Place Eugène Bataillon, 34095 Montpellier cedex 5, France

Abstract

Te-rich films of the Te-Ge-Ga ternary system were deposited by two techniques: the thermal evaporation from glass powder placed in a single source and co-thermal evaporation from the pure elements Te, Ge and Ga placed in three different sources. The last technique was used for the first time to produce chalcogenide films. The composition of the films obtained by thermal evaporation from a single source varied from experiment to experiment indicating the non reproducibility of the procedure. Preliminary results were obtained with the second procedure: Co-thermal evaporation indeed allowed depositing films of the Te-Ge-Ga ternary system with different compositions. Their refractive index and optical band gap were estimated using the transmission spectra recorded in the 400-2500 nm range. Refractive index at 2 μm was situated between 3.5 and 4 and the optical band gap was about 1 eV.

Keywords

Chalcogenide thin films, Thermal evaporation, Co-thermal evaporation, Morphology, Optical properties.

Citation

E. BARTHÉLÉMY, C. VIGREUX-BERCOVICI, P. YOT, A. PRADEL, Co-thermal evaporation: a new method to deposit telluride films, Optoelectronics and Advanced Materials - Rapid Communications, 1, 10, October 2007, pp.487-490 (2007).

Submitted at: Aug. 1, 2007

Accepted at: Aug. 30, 2007