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S. MIHAIU1,* , M. GARTNER1, M.VOICESCU1, M. GABOR2, O. MOCIOIU1, M. ZAHARESCU1
Zinc oxide is classically known for its semiconducting and piezoelectric properties and its use in Schottky diodes and light emitting devices. Its wide direct energy band gap and large excitation binding energy continues to make it an attractive material for nanodevice applications including field effect transistors and bio-molecular sensors. This work presents the characteristics of ZnO films obtained by chemical route, deposited by dip coating on the silicon and glass substrates. The resulting films consolidated by thermal treatment for one hour at 500 °C are slightly crystallized. IRspectra show the characteristics bands of zinc oxide in the 440-490 cm-1 range. Refractive index and extinction coefficients calculated from SE data indicate that thin porous films are obtained. The studied films show a fluorescence emission at room temperature in the UV spectral region. Electrical resistance measurements of the films were performed in the 300- 600°C temperature range.
ZnO films, chemical route, optical properties, electrical behaviour.
S. MIHAIU, M. GARTNER, M.VOICESCU, M. GABOR, O. MOCIOIU, M. ZAHARESCU, Characterization of the ZnO thin films obtained by chemical route, Optoelectronics and Advanced Materials - Rapid Communications, 3, 9, September 2009, pp.884-890 (2009).
Submitted at: July 31, 2009
Accepted at: Sept. 15, 2009
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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