"

Cookies ussage consent

Our site saves small pieces of text information (cookies) on your device in order to deliver better content and for statistical purposes. You can disable the usage of cookies by changing the settings of your browser. By browsing our site without changing the browser settings you grant us permission to store that information on your device.

Characterization of metal nanolayers sputtered on poly(ethyleneterephtalate)

P. SLEPIČKA1,* , V. ŠVORČÍK1, M. ŠLOUF2, V. RYBKA1, M. ŠPIRKOVÁ2

Affiliation

  1. Department of Solid State Engineering, Institute of Chemical Technology, 166 28 Prague, Czech Republic
  2. Institute of Macromolecular Chemistry, Academy of Sciences of the Czech Republic, 162 06 Prague, Czech Republic

Abstract

Gold, silver, palladium and platinum layers were sputtered on polyethyleneterephtalate (PET) films. Sheet electrical resistance, surface topography and thickness of this nanolayers were studied by two-point technique, atomic force microscopy, scanning electron microscopy, transmission electron microscopy and atomic absorption spectroscopy. Chemical structure of metal layers was studied by X-ray photoelectron spectroscopy. Resistance of Au and Ag decreased rapidly with the formation of the continuous layer. In case of Pt and Pd this decrease was more gradual. Ag sputtered layer was oxidized. Different surface topography of layer was observed. Au and Pt layers contains worm-like structures, while Ag consists of clusters and Pd forms homogeneous layer with globe clusters. Transmission electron microscopy showed different thicknesses of the continuous metal layers sputtered under the same deposition conditions. When the metal layers are formed, the main role has the nucleation instead of sputtering yield.

Keywords

Poly(ethyleneterephtalate), Sputtering, Metal nanolayers, Topography, Chemical structure, Sheet resistance.

Citation

P. SLEPIČKA, V. ŠVORČÍK, M. ŠLOUF, V. RYBKA, M. ŠPIRKOVÁ, Characterization of metal nanolayers sputtered on poly(ethyleneterephtalate), Optoelectronics and Advanced Materials - Rapid Communications, 2, 3, March 2008, pp.153-160 (2008).

Submitted at: Feb. 25, 2008

Accepted at: March 16, 2008