CdSe semiconductors that have a direct band gap and high absorption coefficient are quite suitable materials for
photovoltaic devices. The production of semiconductors with a cheap and simple method is very important in terms of cost
reduction. This paper consists fabrication of CdSe thin film with electrodeposition which cheap and simple method. The
electrodeposition was carried out in an aqueous solution consisting low concentration of CdCI2 and TeO2 at room
temperature on indium tin oxide coated glass substrate (ITO) with a 1 mA/cm2
current density. The characterization of CdSe
semiconductors thin film was made by UV-visible spectrophotometer, XRD (X-ray Diffraction), Raman spectroscopy, SEM
(Scanning Electron Microscopy), EDX (Energy Dispersive X-ray Spectroscopy) and Hall-effect measurement. The CdSe
thin film was found to have a hexagonal structure and a 1.71 eV energy band gap. The CdSe film has a chemical
composition of 55 % Cd and 45 % Se. The carrier concentration of n-type CdSe film was measured as 8.80 x 1017 cm-3.
Electrodeposition, CdSe thin film, Structural and optical characterization.
S. ILDAN OZMEN, H. METIN GUBUR, Characterization of CdSe thin film fabricated by electrodeposition, Optoelectronics and Advanced Materials - Rapid Communications, 16, 9-10, September-October 2022, pp.453-457 (2022).
Submitted at: April 7, 2022
Accepted at: Oct. 5, 2022