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S. ILDAN OZMEN1,* , H. METIN GUBUR2
CdSe semiconductors that have a direct band gap and high absorption coefficient are quite suitable materials for photovoltaic devices. The production of semiconductors with a cheap and simple method is very important in terms of cost reduction. This paper consists fabrication of CdSe thin film with electrodeposition which cheap and simple method. The electrodeposition was carried out in an aqueous solution consisting low concentration of CdCI2 and TeO2 at room temperature on indium tin oxide coated glass substrate (ITO) with a 1 mA/cm2 current density. The characterization of CdSe semiconductors thin film was made by UV-visible spectrophotometer, XRD (X-ray Diffraction), Raman spectroscopy, SEM (Scanning Electron Microscopy), EDX (Energy Dispersive X-ray Spectroscopy) and Hall-effect measurement. The CdSe thin film was found to have a hexagonal structure and a 1.71 eV energy band gap. The CdSe film has a chemical composition of 55 % Cd and 45 % Se. The carrier concentration of n-type CdSe film was measured as 8.80 x 1017 cm-3.
Electrodeposition, CdSe thin film, Structural and optical characterization.
S. ILDAN OZMEN, H. METIN GUBUR, Characterization of CdSe thin film fabricated by electrodeposition, Optoelectronics and Advanced Materials - Rapid Communications, 16, 9-10, September-October 2022, pp.453-457 (2022).
Submitted at: April 7, 2022
Accepted at: Oct. 5, 2022
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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