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A. MAHMOOD1,2,* , Z. HASSAN1, F. K. YAM1, L. S. CHUAH3
The structural and optical characteristics of porous GaN prepared by UV assisted electrochemical etching under different etching durations were reported. SEM micrographs indicated that the average pore size for samples was around 0.33 to 0.43 μm. The AFM measurements revealed that the surface roughness increased with etching duration. PL measurements revealed that the near band edge peak of all the porous samples were red-shifted; moreover, the PL intensity enhancement was observed in the porous samples. Raman spectra exhibited the shift of E2 (high) to the lower frequency for porous samples.
Porous GaN, Photoelectrochemical (PEC) anodic etching, SEM, Photoluminescence, Raman scattering.
A. MAHMOOD, Z. HASSAN, F. K. YAM, L. S. CHUAH, Characteristics of undoped porous GaN prepared by UV assisted electrochemical etching, Optoelectronics and Advanced Materials - Rapid Communications, 4, 9, September 2010, pp.1316-1320 (2010).
Submitted at: Aug. 5, 2010
Accepted at: Sept. 15, 2010
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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