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K. TALELE1, E. P. SAMUEL1, D. S. PATIL1,*
Optimization of physical parameters of GaN/AlGaN superlattice structure has been carried out to ensure both fast carrier transport and efficient capture into quantum confined states through scattering mechanism for the development of high speed lasers. The interaction of electrons with the optical phonons has been considered for the scattering of electrons by emission of optical phonons for studying physical properties of superlattice. The electron confinement in a superlattice structure has been realized for odd and even number of quantum wells. Transfer Matrix Method (TMM) had been used to obtain the wave function intensity. The effect of material composition on barrier height and energy has been explored and the effect of eigenenergy variation on the transmission coefficient and Scattering rate has been investigated. The better electron confinement has been obtained at the center of the superlattice structure as expected. It reveals from our analysis that the scattering rate decreases with increase in aluminum mole fraction and increases linearly with the increase in temperature considerably. Scattering rate was found to increase linearly with the increase in wavelength and it has been attributed to the increase in eigenenergy and static dielectric constant.
Superlattice, GaN/AlGaN, Carrier transport, Scattering.
K. TALELE, E. P. SAMUEL, D. S. PATIL, Carrier transport studies and scattering mechanism in GaN/AlGaN superlattice for high speed lasers, Optoelectronics and Advanced Materials - Rapid Communications, 1, 11, November 2007, pp.576-582 (2007).
Submitted at: Oct. 18, 2007
Accepted at: Oct. 31, 2007
Optoelectronics and Advanced Materials - Rapid Communications
(2024): Impact Factor = 0.4 - Journal Citation Reports (Clarivate Analytics, 2025)
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