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V. SHELKE1, B. K. SONAWANE1, M. P. BHOLE1, D. S. PATIL1,*
Transparent conducting Al-doped ZnO thin films were prepared on glass substrates by spin coating method. The effects of an annealing treatment on electrical and optical properties were investigated for 1.5 atomic percentage of aluminum. The average optical transmittance of 90 % in the visible range was obtained exploring the potential of these films for transparent electronics. The minimum electrical resistivity of 0.247 Ω cm was obtained. We realize the optical band gap of 3.3 eV for 1.5 atomic percentage of aluminum.
Spin coating, Al doped ZnO, Transparent electronics.
V. SHELKE, B. K. SONAWANE, M. P. BHOLE, D. S. PATIL, Annealing temperature effect on the aluminium doped ZnO films for transparent electronics, Optoelectronics and Advanced Materials - Rapid Communications, 2, 10, October 2008, pp.666-668 (2008).
Submitted at: Aug. 1, 2008
Accepted at: Oct. 2, 2008
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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