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Annealing processes in controlling the structures and properties of Solar Cell absorbed layer-CuInSe2 films

XIN JI1,* , YIMING MI1,* , ZHI YAN2, CHAO MIN ZHANG1

Affiliation

  1. College of Fundamental Studies, Shanghai University of Engineering Science, Shanghai 201620, China
  2. College of Material Engineering, Shanghai University of Engineering Science, Shanghai 201620, China

Abstract

CuInSe2 thin films were successfully deposited on SFO (SnO2: F) glass substrates by magnetron RF-sputtering then annealed in vacuum at different temperatures (200, 250, 350 and 400 ). The effect of the annealing temperatures on the film structures, morphologies, and properties was investigated in detail. The results show that the CIS films with the room temperature by magnetron RF-sputtering was found to exhibit not amorphous but chalcopyrite phase structure. At the higher annealing temperatures the crystallinity and grain size were enhanced. Moreover, the 200 annealed CIS film shows better electrical behavior than other films. Finally, the optical measurements suggest that the optical property increased for annealing temperatures more than 200.

Keywords

Thin film, CuInSe2, Annealing processes, Vapor deposition, Optical properties.

Citation

XIN JI, YIMING MI, ZHI YAN, CHAO MIN ZHANG, Annealing processes in controlling the structures and properties of Solar Cell absorbed layer-CuInSe2 films, Optoelectronics and Advanced Materials - Rapid Communications, 5, 9, September 2011, pp.977-981 (2011).

Submitted at: Sept. 3, 2011

Accepted at: Sept. 15, 2011