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Analytical model of SiC DIMOSFET’s drift region voltage impact on current-voltage characteristics

P. M. LUKIĆ1,* , R. M. ŠAŠIĆ2, B. B. LONĈAR2, A. G. ŢUNJIĆ1

Affiliation

  1. University of Belgrade, Faculty of Mechanical Engineering, Kraljice Marije 16, Belgrade, Serbia
  2. Univertsity of Belgrade, Faculty of Technology and Metallurgy, Karnegijeva 4, Belgrade, Serbia

Abstract

This paper presents new results obtained by investigations of silicon carbide (SiC) based vertical Double Implanted Metal Oxide Semiconductor Field Effect Transistor (DIMOSFET). The results are described and presented by the analytical model of drift region voltage and it's impact on SiC DIMOSFET current-voltage characteristics. The drift region is devided into sections. For each of them, voltage analytical model across the corresponding section is developed. Mobility dependence model on temperature and electric field is introduced. Finally, current-voltage characteristics are obtained, by using drain to surce voltage model which incorporate the mentioned partial voltages. Proposed model is based on the physics of the SiC DIMOSFET. Significant effects are taken into account, thus the model is accurate. At the same time exposed model is relatively simple. By using developed model simulations were performed. The obtained results are in very good agreement with already known and published ones..

Keywords

SiC DIMOSFET, Drift region voltage, Analytical model.

Citation

P. M. LUKIĆ, R. M. ŠAŠIĆ, B. B. LONĈAR, A. G. ŢUNJIĆ, Analytical model of SiC DIMOSFET’s drift region voltage impact on current-voltage characteristics, Optoelectronics and Advanced Materials - Rapid Communications, 5, 5, May 2011, pp.551-554 (2011).

Submitted at: April 14, 2011

Accepted at: May 31, 2011