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E. P. SAMUEL1,* , D. S. PATIL1
The paper presents the analyses of the influence of carrier concentration and applied voltage on the various optical and electrical characteristics. The analyses have been carried out through Luttinger-Kohn Hamiltonian and the Schrodinger and Poisson’s equations have been solved in a self-consistent manner. The effects of strain and piezoelectric polarization on quantum well laser diode are included in the analyses. We have achieved better optical gain and quantum efficiency for single quantum well lasers.
Quantum well laser, Luttinger-Kohn hamiltonian.
E. P. SAMUEL, D. S. PATIL, Analysis of properties of nitride based quantum well laser diode using Luttinger-Kohn hamiltonian, Optoelectronics and Advanced Materials - Rapid Communications, 2, 8, August 2008, pp.498-501 (2008).
Submitted at: June 10, 2008
Accepted at: July 16, 2008
Optoelectronics and Advanced Materials - Rapid Communications
(2024): Impact Factor = 0.4 - Journal Citation Reports (Clarivate Analytics, 2025)
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