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Analysis of phase shifter length for forward biased silicon-on-insulator (SOI) optical modulator

A. R. HANIM1, P. S. MENON1,* , S. SHAARI1, H. HAZURA1, B. MARDIANA1

Affiliation

  1. Photonics Technology Laboratory (PTL), Institute of Micro Engineering and Nanoelectronics (IMEN), Universiti Kebangsaan Malaysia, 43600 UKM, Bangi, Selangor, Malaysia

Abstract

This paper investigates the performance of a three-dimensional virtual model of a Silicon-on-Insulator (SOI) optical phase modulator using an industrial-based numerical simulator. The 3 dB bandwidth of the device was analyzed by varying the phase shifter length to 6, 12 and 18 μm. Then, the effect of varying the phase shifter length to different concentration of boron (p+ doped well) and phosphorus (n+ doped well) was observed. It can be deduced that with appropriate applied voltage selection, the device performs the best at 6μm phase shifter length and at higher concentration of the doped wells. The best performance of the device is at 1V, with 3 dB bandwidth of 1.4THz..

Keywords

Phase shifter length, SOI current injection modulator, 3 dB bandwidth.

Citation

A. R. HANIM, P. S. MENON, S. SHAARI, H. HAZURA, B. MARDIANA, Analysis of phase shifter length for forward biased silicon-on-insulator (SOI) optical modulator, Optoelectronics and Advanced Materials - Rapid Communications, 7, 3-4, March-April 2013, pp.305-308 (2013).

Submitted at: Dec. 6, 2012

Accepted at: April 11, 2013