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E. P. SAMUEL1,* , D. S. PATIL1
We have solved Schrödinger wave equation to study the quantization and electron transport behavior in finite quantum well of GaN/AlGaN biased laser diode. The study of electron confinement in single quantum well has been carried out by using quasi transmitting boundary method for complete numerical solution of the quasi bound states. The wave functions have been deduced using finite well potential energy for the varying applied bias voltage. Computer simulation tools have been developed using MATLAB to study distribution of wave function within the quantum well biased laser diode. The spread of the probability density has been obtained by estimating the full width at half maximum (FWHM) with the quantum well thickness of 5 nanometer, 30% Aluminum mole fraction for different values of bias voltage. The probability density shows greater spread for the lower value of bias voltage. It further reveals that electron energy increases nonlinearly with the increase in electric field.
Electric filed, Electron confinement, Quantum well.
E. P. SAMUEL, D. S. PATIL, Analysis of electron confinement in quantum well biased laser diode using quasi transmitting boundary method, Optoelectronics and Advanced Materials - Rapid Communications, 1, 12, December 2007, pp.698-701 (2007).
Submitted at: Nov. 15, 2007
Accepted at: Nov. 27, 2007
Optoelectronics and Advanced Materials - Rapid Communications
(2024): Impact Factor = 0.4 - Journal Citation Reports (Clarivate Analytics, 2025)
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