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Analysis of Be doping influence on strained GaAsP layer grown on GaAs substrate by MBE

JIAO GANG-CHENG1,2,3,* , SHI FENG2,3, GUO HUI2,3, HU CANG-LU2,3, XU XIAO-BING2,3, ZHANG LIAN-DONG2,3, MIAO ZHUANG2,3, CHENG HONG-CHANG2,3

Affiliation

  1. School of Materials Science and Engineering, Northwestern Polytechnical University, State Key Laboratory of Solidification Processing, 710072 Xi'an, China
  2. Science and Technology on low-light-level night vision laboratory, 710065 Xi'an, China
  3. North Night Vision Technology Group Co., Ltd, 650223 Kunming, China

Abstract

GaAs1-xPx/GaAs compound materials are used in the Negative electron affinity (NEA) III-V semiconductor photocathode for 532 nm sensitive. The author studies 880 oC, 900 oC and 920 oC Be cell temperature for material performance influence by HR XRD, AFM, ECV and Hall system. Below the 900 oC of the Be cell, the material performance were improved, which resulted in smaller surface roughness and lower threading dislocation density. Since Be doping is essential for GaAsP photocathode of GENIII imaging intensifier, these results are useful for improving the GaAsP photocathode material properties and performance of device..

Keywords

GaAsP, Be doping, Molecular beam epitaxy, Crystalline quality.

Citation

JIAO GANG-CHENG, SHI FENG, GUO HUI, HU CANG-LU, XU XIAO-BING, ZHANG LIAN-DONG, MIAO ZHUANG, CHENG HONG-CHANG, Analysis of Be doping influence on strained GaAsP layer grown on GaAs substrate by MBE, Optoelectronics and Advanced Materials - Rapid Communications, 8, 11-12, November-December 2014, pp.1104-1106 (2014).

Submitted at: Dec. 9, 2013

Accepted at: Nov. 13, 2014