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An insight in the formation of thermal double donors in Cz-silicon

SHYAM SINGH1,* , RAJEEV SINGH2, B. C. YADAV2

Affiliation

  1. R. R. Institute of Modern Technology, Lucknow (U.P.), India
  2. Department of Physics, Lucknow University, Lucknow (U.P.), India

Abstract

Sixteen neutral species of thermal double donors (TDD1-TDD16) and nine positively charged species (TDD1-TDD9) have been detected and confirmed through IR absorption spectra. However, the existence of TDD0 based on photoconductive and Hall measurement is still under debate. Though the strength of the donors is reasonably good totalling to twenty six, the formation kinetics still carries a mark of interrogation. Average number of oxygen atoms involved in a single TD is also not certain. One of the authors has earlier reported on an average, the involvement of seven oxygen atoms. This point very much relevant to the understanding of formation kinetics is to be looked into. There are similar many questions still unanswered which may be explained based on the concept of dimers and trimers. However, there is a likelihood of dimertrimer pairing via defect states. TDD0 does not seem to be a stable configuration as more and more oxygen atoms may further add to TDD0 converting into other configurations. A further insight into the TDD problem can be gained on the basis of dimers, trimers and their consequent pairing. The purpose of the present article is to highlight its vibrant character still not fully understood..

Keywords

Cz-Silicon, Thermal double donor, Defect, Oxygen, Vacancy.

Citation

SHYAM SINGH, RAJEEV SINGH, B. C. YADAV, An insight in the formation of thermal double donors in Cz-silicon, Optoelectronics and Advanced Materials - Rapid Communications, 5, 11, November 2011, pp.1252-1255 (2011).

Submitted at: March 9, 2011

Accepted at: Nov. 23, 2011