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Aluminium doped zinc oxide films as a transparent conducting electrode for organic light emitting devices

V. SHELAKE1, M. P. BHOLE1, D. S. PATIL1,*

Affiliation

  1. Department of Electronics, North Maharashtra University, Jalgaon, Maharashtra, India

Abstract

Aluminium (Al) doped Zinc Oxide (ZnO) films were deposited by sol gel spin coating method. Zinc acetate, aluminium nitride, lactic acid and ethanol were used as starting precursors. The films of aluminium doped ZnO were deposited on microscopic glass substrate at various atomic percentage of aluminium to investigate its effect on electrical and optical properties. The sheet resistance was altered with change in aluminium concentration. The minimum sheet resistance of 0.82 Mohm was obtained at 1.41 at% of Al. From the transmittance spectra, it was noticed that the average transmittance was declined for higher values of Al at%. The optical band gap energy was ~3.2 eV for undoped ZnO and was found to be shifted to ~3.39 eV for the sample having the lowest sheet resistance.

Keywords

Aluminium zinc oxide, Sol gel, Sheet resistance.

Citation

V. SHELAKE, M. P. BHOLE, D. S. PATIL, Aluminium doped zinc oxide films as a transparent conducting electrode for organic light emitting devices, Optoelectronics and Advanced Materials - Rapid Communications, 2, 6, June 2008, pp.353-355 (2008).

Submitted at: April 7, 2008

Accepted at: June 5, 2008