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S. SAYGI1,* , K. O. SAYGI1
In this article, we propose an approach to calculate the effective electron concentration and electron energy density in multilayer high electron mobility transistors (HEMT). After utilizing an interesting mathematical change to achieve realistic results, numerical modeling was applied to model devices with algebraic computer language. The simulation results for band structure and electron density profile are comparable with those of other numerical calculations.
Electron concentration, Modeling of devices, HEMT, Incomplete Gamma functions, Numerical modeling.
S. SAYGI, K. O. SAYGI, Accurate evaluation of electron energy density and electron concentration in quantum wells, Optoelectronics and Advanced Materials - Rapid Communications, 14, 11-12, November-December 2020, pp.538-541 (2020).
Submitted at: May 30, 2020
Accepted at: Nov. 25, 2020
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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