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R. KUMAR1,* , A. KUMAR2, V. S. RANGRA3
In the present paper we have calculated the number of constraints, effective coordination number, theoretical band gap, average heat of atomization, average single bond energy, lone pair electrons, bond energy of different bonds, glass transition temperature and mean bond energy for Ge17Se83-xInx (x = 0, 3, 6, 9, 12, 15) alloys. Alloys were prepared using melt quenching technique. It has been observed that theoretical band gap decreases with the increase of In content. This decrease may be explained on the basis of increase in heat of atomization with the increase of In content. From the mean bond energy calculations it has been found that there is a change in trend at <r> = 2.43.
Chalcogenide glassy semiconductors, Physical properties, Theoretical band gap.
R. KUMAR, A. KUMAR, V. S. RANGRA, A study of physical properties of Ge-Se-In glassy semiconductors, Optoelectronics and Advanced Materials - Rapid Communications, 4, 10, October 2010, pp.1554-1558 (2010).
Submitted at: Aug. 14, 2010
Accepted at: Oct. 14, 2010
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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