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M. NESTOROS1,* , M. MOUROUTI2, N. C. PAPANICOLAOU3, C. CHRISTOFIDES2
A series of ion implanted Si thin film pseudo-devices with various dimensions in the micrometer region was investigated for different values and orientations of an applied external electric field, utilizing photothermal microscopy. The important features of the photothermal signal namely its linearity as a function of the applied electric field as well as the saturation effect are discussed and an one dimensional model is used for a qualitative interpretation of the results. Photothermal microscopy is proved to be a sensitive technique for carrier transport monitoring in microelectronic circuit elements..
Photothermal microscopy, Carrier transport, Implanted silicon thin films.
M. NESTOROS, M. MOUROUTI, N. C. PAPANICOLAOU, C. CHRISTOFIDES, A photothermal microscopy investigation of carrier transport in ion implanted silicon thin films under the action of external electric field, Optoelectronics and Advanced Materials - Rapid Communications, 5, 5, May 2011, pp.505-509 (2011).
Submitted at: April 11, 2011
Accepted at: May 31, 2011
Optoelectronics and Advanced Materials - Rapid Communications
(2022): 0.5 - 2022 Journal Citation Reports (Clarivate Analytics, 2023)
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