Abstract
ZnO thin films were prepared by two-step thermal oxidation of thermal evaporation Zn films on glass substrates. The
oxidation was carried out in air by a two-step, first at 250°C for 2 hours, then at 400°C,450°C 500°C, and 600°C for 1 hour,
respectively. The structural and optical properties of ZnO films were investigated by X-ray diffraction (XRD), Scanning
electron microscopy (SEM) and optical transmittance. X-ray diffraction (XRD) and scanning electron microscopy (SEM)
studies indicated that the ZnO film obtained at 500°C oxidation temperature for 1h has the highest crystallinity quality. The
photoluminescence (PL) measurements performed at RT show that the film oxidized at 500°C exhibits the highest intensity
and the narrowest full-width at half-maximum (FWHM) of ultraviolet (UV) emission at 370nm . The optical transmittance
measurements show that ZnO films are highly transparent in the visible region and the absorption edge blue shifts with
increasing oxidation temperature from 5000 – 600 oC. The optical bandgap at 500 °C were calculated to be 3.27 eV. In
conclusion, by optimizing the preparation parameters in this simple technique, high crystallinity quality ZnO thin films with
good optical properties can be successfully achieved.
Keywords
ZnO thin film, Evaporating deposition, PL spectra, Optical properties.
Citation
JUN ZHANG, LE-XI SHAO, A novel simple preparation technique of ZnO thin film with good structural and optical properties, Optoelectronics and Advanced Materials - Rapid Communications, 1, 11, November 2007, pp.625-628 (2007).
Submitted at: Sept. 17, 2007
Accepted at: Oct. 31, 2007