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IMHAMMAD ABOOD1, PETAR M. LUKIĆ2,* , RAJKO M. ŠAŠIĆ1, ABED ALKHEM ALKOASH1, STANKO M. OSTOJIĆ1
4H-SiC VDMOS is a peculiar semiconductor structure with two considerably different recognized regions. One of them is a vertical drift region, whereas the other one appears as a horizontal channel with its left and right sections corresponding to source bias. In each of these regions current-voltage characterisic can become saturated regardless of the status of the other region, thus making possible several operation modes of the considered devices. The investigation of the onset of these saturations in their order of appearance is the goal of this paper..
4H-SiC VDMOS, Drift-region saturation, Channel saturation.
IMHAMMAD ABOOD, PETAR M. LUKIĆ, RAJKO M. ŠAŠIĆ, ABED ALKHEM ALKOASH, STANKO M. OSTOJIĆ, 4H-SiC VDMOS – drift-region saturation, channel saturation and their order of appearance, Optoelectronics and Advanced Materials - Rapid Communications, 7, 5-6, May-June 2013, pp.329-333 (2013).
Submitted at: Oct. 31, 2012
Accepted at: June 12, 2013
Optoelectronics and Advanced Materials - Rapid Communications
(2022): 0.5 - 2022 Journal Citation Reports (Clarivate Analytics, 2023)
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