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2d numerical modeling and simulation of a non-uniform doped electric field dependent MESFET photodetector

M. KABEER1, V. RAJAMANI2,*

Affiliation

  1. Department of Information Technology, B.S. Abdur Rahman Crescent Engg. College, Chennai, Tamilnadu, India
  2. Department of Electronics and Communication Engineering, P.S.N.A. College of Engineering and Technology, Dindigul – 624 622, Tamil Nadu, India

Abstract

Numerical simulation of a non-uniform doped optically gated GaAs MESFET photodetector for the characterization of the device as photodetector has been presented in this paper. The model involves the solution of a 2D Poissons equation with proper boundary conditions and the field dependent mobility of the cariers in the channels for the computation of the drain current. It has been found that in a short channel MESFET photodetector, the drain current saturation is caused by the velocity saturation of the carriers rather than the pinch off condition. The non uniform doping density in the channel, the electric filed along the x and y direction has also been calculated numerically. We have also computed the transimpendence and the drain resistance of the GaAs MESFET numerically. It has been seen that the two dimensional modeling provides better accurate solution and closely fit with the experimental results. The model can be used as basic tool for an accurate simulation of MESFET photodetector for the OEIC applications.

Keywords

2D numerical modeling, GaAs MESFET photodetector, Non-uniform doping profile, Field dependent photocurrent.

Citation

M. KABEER, V. RAJAMANI, 2d numerical modeling and simulation of a non-uniform doped electric field dependent MESFET photodetector, Optoelectronics and Advanced Materials - Rapid Communications, 1, 11, November 2007, pp.583-587 (2007).

Submitted at: Sept. 3, 2007

Accepted at: Oct. 31, 2007