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A. TATAROĞLU1,* , T. ATASEVEN1, S SEZGIN1, F. Z. PÜR1
The effects of γ-ray irradiation on the dielectric properties of Au/SiO2/n-Si (MIS) structures were investigated. Structures were exposed to a 60Co γ-radiation source with a dose rate of 2.12 kGy/h. The dielectric constant (ε'), dielectric loss (ε''), loss factor (tanδ) and ac electrical conductivity (ac) were calculated from the C-V and G/ω-V measurements and plotted as a function of radiation dose at high frequency (1 MHz). A decrease in the ε' and ε'' was observed as the irradiation dose was increased. The decrease in the magnitudes of the ε' and ε'' of irradiated MIS structures is explained on the basis of Maxwell-Wagner interfacial polarization. The obtained data from the C-V and G/ω-V measurements suggest that these structures may be used in radiation dosimetry applications..
Radiation effects, MIS structures, Dielectric properties, Conductivity, Electric modulus.
A. TATAROĞLU, T. ATASEVEN, S SEZGIN, F. Z. PÜR, γ-ray irradiation effects on dielectric properties of Au/SiO2/n-Si (MIS) structures, Optoelectronics and Advanced Materials - Rapid Communications, 5, 4, April 2011, pp.443-447 (2011).
Submitted at: Oct. 18, 2010
Accepted at: April 11, 2011
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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