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J. GUO1, C. S. CHEN1, B. Y. MAN1,* , J. WANG1, S. Y. YANG1, X. M. ZHOU1
Time-resolved optical emission spectroscopy in ultraviolet was used to characterize a ablation plasma on a GaAs target, produced by 1064nm, 10ns pulsed laser. The evolution and the character of the spectra were analyzed. Under the assumption of local thermodynamic equilibrium, the electron temperature was obtained in the early stages of the plasma using blackbody approximation for the emitted radiation and in the later stages of the plasma by a Boltzmann plot for the lines intensities. The line broadenings of the N II (399.50 nm) and the Ga I (294.36 nm) were used to estimate the evolution of the electron density. The time evolution of the electron temperature and the electron density were obtained. In addition, the line width and shift of Ga I 287.40 nm and As I 278.02 nm lines were detected and analyzed.
Ultraviolet spectrum, Laser ablation, Electron temperature, Electron density, Line width and shift.
J. GUO, C. S. CHEN, B. Y. MAN, J. WANG, S. Y. YANG, X. M. ZHOU, Ultraviolet temporal spectrum analysis of laser induced GaAs plasma, Optoelectronics and Advanced Materials - Rapid Communications, 3, 3, March 2009, pp.270-275 (2009).
Submitted at: March 7, 2009
Accepted at: March 19, 2009
Optoelectronics and Advanced Materials - Rapid Communications
(2025): Impact Factor = 0.5 - Journal Citation Reports (Clarivate Analytics, 2026)
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