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Thermal annealing effect on properties of Zn thin films deposited on Si (111) substrates by dc sputtering

L. S. CHUAH1,* , Z. HASSAN2, S. S. TNEH2

Affiliation

  1. Physics Section, School of Distance Education, Universiti Sains Malaysia, 11800 Penang, Malaysia
  2. School of Physics, Universiti Sains Malaysia, 11800 Minden, Penang, Malaysia

Abstract

Zn films were deposited on silicon (111) by dc sputtering deposition technology from high purity Zn targets with a purity of 99.99 %. Then, annealing of Zn films was performed in air for 1 hour at 800 ºC. The effects of annealing on the structural and optical properties of ZnO thin films on Si(111) substrates were investigated using atomic force microscopy (AFM), X-ray diffraction (XRD), and photoluminescence (PL) measurements. XRD patterns and AFM showed that the annealed ZnO films grown on Si(111) substrates have c-axis preferential orientation, the crystallinity of the ZnO films grown on Si (111) substrates was improved, and the grain size increased by thermal annealing. PL spectra is clearly visible at 382 nm for ZnO film grown on Si(111) substrates..

Keywords

Annealing, Si(111), PL, XRD, ZnO thin films.

Citation

L. S. CHUAH, Z. HASSAN, S. S. TNEH, Thermal annealing effect on properties of Zn thin films deposited on Si (111) substrates by dc sputtering, Optoelectronics and Advanced Materials - Rapid Communications, 4, 4, April 2010, pp.502-504 (2010).

Submitted at: Feb. 22, 2010

Accepted at: April 11, 2010