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M. ODUNCUOĞLU1,* , M. BABAOĞLU1
This paper presents the theoretical calculations of the electronic properties of InxGa1−xNyP1−y quantum wells on GaP substrates which are expected to be advantageous for quantum well based light emitting diodes in visible range. We theoretically calculate the bandgap, the band offset, and effective mass of novel direct bandgap InGaNP/GaP structures to determine transition energies. Our calculations show that the incorporation of nitrogen into InxGa1−xP improves the band alignment. The band offsets and transition energies of InGaNP/GaP heterostructures are investigated for different indium (x) concentrations.
Quantum wells, Nitrides, Indium gallium nitride phosphide, Light-emitting diodes.
M. ODUNCUOĞLU, M. BABAOĞLU, Theoretical study of material parameters of InGaNP/GaP quantum structures, Optoelectronics and Advanced Materials - Rapid Communications, 3, 3, March 2009, pp.166-170 (2009).
Submitted at: Dec. 19, 2008
Accepted at: March 19, 2009
Optoelectronics and Advanced Materials - Rapid Communications
(2025): Impact Factor = 0.5 - Journal Citation Reports (Clarivate Analytics, 2026)
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