Abstract
The forward bias current-voltage (I-V) characteristics of Au-/n-Si(111) Shottky barrier diodes (SBDs) with native interfacial insulator layer have been investigated in the wide temperature range of 80-400 K. Their analysis on the basis of the standard thermionic emission (TE) mechanism reveals an abnormal decrease of the zero-bias barrier height (ΦB) and increase of ideality factor (n) with decrease in temperature and nonlinearity in the activation energy plot. Such behavior of ΦB0 and n are attributed the barrier inhomogeneities by assuming a Gaussian distribution (GD) of barrier heights (BHs) at
metal/semiconductor (M/S) interface. The experimental ΦB vs q/2kT plot show that an existence of a double GD having mean BHs and standard deviations 0.747 eV and 0,081 V (between 80 and 200 K) and 1.203 eV and 0.146 V (between 230 and 400 K), respectively. Thus, the modified ln(Io/T2)-q2σo
2/2k2T2 vs q/kT plot gives ΦB and A* as 0.682 eV and 3.14 A cm-2 K-2 (between 80 and 200 K) and 1.199 eV and 110.16 A cm-2 K-2 (between 230 and 400 K), respectively, without using the temperature coefficient of the BH. This value of the Richardson constant 110.16 A/cm2K2 is close to the
theoretical value of 120 A K-2 cm-2 for n-type Si. Hence, it has been concluded that the temperature dependence of the forward bias I-V characteristics of the Au-/n-Si(111) SBDs can be successfully explained on the basis of TE mechanism with a double GD of the BHs..
Keywords
Au-/n-Si(111) Schottky barrier diodes, I-V-T characteristic, Barrier inhomogeneity, Double Gaussian distribution, Modified Richardson plot.
Citation
P. DURMUŞ, B. ÇUHA, Ş. ALTINDAL, U. AYDEMİR, The distribution of barrier heights in Au/n-Si Schottky barrier diodes from I-V-T measurements, Optoelectronics and Advanced Materials - Rapid Communications, 4, 4, April 2010, pp.579-583 (2010).
Submitted at: Oct. 4, 2009
Accepted at: April 11, 2010