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Te-Ge-Ga thin films deposited by co-thermal evaporation

J. FRAYRET1, E. BARTHÉLÉMY1, S. ALBERT1, C. VIGREUX1,* , A. PRADEL1

Affiliation

  1. Institut Charles Gerhardt - Institut de Chimie Moléculaire et des Matériaux de Montpellier - Equipe Physicochimie des Matériaux Désordonnés et Poreux, CNRS : UMR5253 – UMII – ENSCM – UMI, Place Eugène

Abstract

Thin films of the Te-Ge-Ga ternary system have been deposited by co-thermal evaporation: tellurium and germanium were evaporated by current induced heating and gallium was evaporated by electron beam bombardment. Co-thermal evaporation allowed depositing films with very different compositions. A large amorphous region was defined and compared to that obtained for the bulk materials. Films were proved to be adhesive to the substrate, dense and characterised by a low roughness. The thickness and composition of the films were shown to be homogeneous all over the substrate. The refractive indexes and optical band gap of the co-thermally evaporated films were estimated using the transmission spectra recorded in the region 800-2500 nm.

Keywords

Te-Ge-Ga, Telluride films, Co-thermal evaporation, Thin films.

Citation

J. FRAYRET, E. BARTHÉLÉMY, S. ALBERT, C. VIGREUX, A. PRADEL, Te-Ge-Ga thin films deposited by co-thermal evaporation, Optoelectronics and Advanced Materials - Rapid Communications, 3, 3, March 2009, pp.260-264 (2009).

Submitted at: March 9, 2009

Accepted at: March 19, 2009