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A. GANGULY1,* , S. S. NATH2, V. M. SRIVASTAVA1
SnO2 quantum dots are synthesized via chemical method and exposed to 100 MeV high energy Nickel ion beam (swift heavy ion). The prepared quantum dot samples have been examined in a fabricated ZnO/QD based nano light emitting device by studying the variation of electroluminescence with variation of supply voltage at room temperature. Higher value of light emission and almost linear variation of EL intensity with voltage is obtained for irradiated quantum dots compared to that of pristine ones. Thus swift heavy ion irradiated SnO2 quantum dots are better suited as high intensity light emitting device at room temperature..
SnO2 , Quantum Dots, Ion Irradiation, Electroluminisecence, Light Emitting Devics.
A. GANGULY, S. S. NATH, V. M. SRIVASTAVA, Swift heavy ion irradiated SnO2 quantum dots based nano light emitting device, Optoelectronics and Advanced Materials - Rapid Communications, 15, 3-4, March-April 2021, pp.120-123 (2021).
Submitted at: April 16, 2020
Accepted at: April 7, 2021
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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