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Recrystallization mechanism of amorphous silicon thin films upon excimer laser crystallization

CHIL-CHYUAN KUO1,2, WEN-CHANG YEH3, CHIH-PING HSIAO1, JENG-YWAN JENG1,*

Affiliation

  1. Department of Mechanical Engineering, National Taiwan University of Science and Technology No. 43, Keelung Road, Sec. 4, Taipei, Taiwan, 106
  2. Department of Mechanical Engineering, Mingchi University of Technology No. 84 Gungjuan Road, Taishan, Taipei Hsien, Taiwan, 243
  3. Department of Electronic Engineering, National Taiwan University of Science and Technology No. 43, Keelung Road, Sec. 4, Taipei, Taiwan, 106

Abstract

Melting and recrystallization phenomena of plasma-enhanced chemical vapor deposition (PECVD) amorphous silicon (a-Si) thin films for both frontside and backside excimer laser crystallization (ELC) have been investigated by in-situ real-time optical reflectivity and transmissivity (TRORT) measurements with nanosecond time resolution. The longest melt-phase duration of 90-nm-thick a-Si thin films for both frontside and backside ELC is 350 ns. The ablation excimer laser fluence of a-Si thin films for frontside ELC is higher than that of backside ELC because SiO2 films show anti-reflectivity for excimer laser beam. TRORT measurements reveal that the solidification direction of molten Si for both frontside and backside ELC start from the interface of the sample and the recrystallization mechanism for both frontside and backside ELC are the same.

Keywords

Amorphous silicon, Recrystallization, Excimer laser crystallization.

Citation

CHIL-CHYUAN KUO, WEN-CHANG YEH, CHIH-PING HSIAO, JENG-YWAN JENG, Recrystallization mechanism of amorphous silicon thin films upon excimer laser crystallization, Optoelectronics and Advanced Materials - Rapid Communications, 1, 1, January 2007, pp.25-30 (2007).

Submitted at: Dec. 19, 2006

Accepted at: Jan. 12, 2007