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Nitrogen partial pressure influence on physical properties of DC magnetron sputtered copper nitride films

K. VENKATA SUBBA REDDY1, T. K. SUBRAMANYAM2, S. UTHANNA1,*

Affiliation

  1. Department of Physics, Sri Venkateswara University, Tirupati – 517 502, India
  2. Savcor Coatings Oy, Insinoorinkatu 7, FI-50100 Mikkeli, Finland

Abstract

Dc magnetron sputtering technique was employed for preparation of copper nitride films on glass substrates by sputtering of copper target at a substrate temperature of 423 K under various nitrogen partial pressures in the range 1x10-4 – 5x10-3 mbar. The dependence of cathode potential on the nitrogen partial pressure was explained in terms of nitridation of copper target and secondary electron emission. The deposition rate of the films was correlated with the nitrogen partial pressure. The effect of nitrogen partial pressure on the structural, mechanical, electrical and optical properties of copper nitride films was systematically investigated. The single phase films of copper nitride with electrical resistivity of 5x10-2 Ω cm, microhardness of 4.1 GPa under optical bandgap of 1.85 eV were obtained at nitrogen partial pressure of 1x10-3 mbar.

Keywords

Copper nitride, Magnetron sputtering, Thin films, Nitrogen partial pressure.

Citation

K. VENKATA SUBBA REDDY, T. K. SUBRAMANYAM, S. UTHANNA, Nitrogen partial pressure influence on physical properties of DC magnetron sputtered copper nitride films, Optoelectronics and Advanced Materials - Rapid Communications, 1, 1, January 2007, pp.31-35 (2007).

Submitted at: Jan. 5, 2007

Accepted at: Jan. 12, 2007