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Monte Carlo simulation of electron mobility in a material for optoelectronics at 77 K

P. S. MALLICK1,* , D. KANNADASSAN1

Affiliation

  1. School of Electrical sciences, VIT University, Vellore. 623014, Tamilnadu, India

Abstract

The electron mobility values have been obtained at 77K using the Monte Carlo simulation technique. The values agree satisfactorily with available data. The mobility values thus obtained have then been expressed by simple power law relationship. It is observed that the mobility values calculated by using these simple power law relations yield values that show agreement within 5% with those obtained from the detailed Monte Carlo simulation technique. We conclude that such empirical relationships can be effectively used for quick determination of mobility values at different electric fields in a device-modelling program and in the development of CAD tools..

Keywords

Zinc oxide, Monte Carlo simulation, Electron mobility, Empirical relation.

Citation

P. S. MALLICK, D. KANNADASSAN, Monte Carlo simulation of electron mobility in a material for optoelectronics at 77 K, Optoelectronics and Advanced Materials - Rapid Communications, 4, 4, April 2010, pp.512-515 (2010).

Submitted at: Feb. 11, 2010

Accepted at: April 11, 2010