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Investigation of optical gain in ZnO/MgZnO quantum well incorporating piezoelectric polarization

H. P. BHADANE1, E. P. SAMUEL1, D. S. PATIL1,*

Affiliation

  1. Department of Electronics, North Maharashtra University, Jalgaon [Maharashtra], India

Abstract

Quantum well heterostructures comprising ZnO wells sandwiched within MgZnO barriers have been investigated through Kronig Penny Model. The carrier density has been obtained through self consistent solutions of Schrödinger and Poisson equation. The optical gain obtained for ZnO/MgZnO quantum well structure was 4113 (cm-1) for Mg mole fraction of 30% with carrier density 3.9 ×1018 cm-3. The probability density shows a good confinement in the quantum well region for well width of 5 nm considering 30% of Mg composition in the barrier. Peak value of optical gain was found to be maximum for higher value of carrier density as expected.

Keywords

ZnO/MgZnO, Quantum well, Piezoelectric polarization.

Citation

H. P. BHADANE, E. P. SAMUEL, D. S. PATIL, Investigation of optical gain in ZnO/MgZnO quantum well incorporating piezoelectric polarization, Optoelectronics and Advanced Materials - Rapid Communications, 3, 3, March 2009, pp.200-203 (2009).

Submitted at: Jan. 30, 2009

Accepted at: March 19, 2009