Abstract
Quantum well heterostructures comprising ZnO wells sandwiched within MgZnO barriers have been investigated through
Kronig Penny Model. The carrier density has been obtained through self consistent solutions of Schrödinger and Poisson
equation. The optical gain obtained for ZnO/MgZnO quantum well structure was 4113 (cm-1) for Mg mole fraction of 30%
with carrier density 3.9 ×1018 cm-3. The probability density shows a good confinement in the quantum well region for well
width of 5 nm considering 30% of Mg composition in the barrier. Peak value of optical gain was found to be maximum for
higher value of carrier density as expected.
Keywords
ZnO/MgZnO, Quantum well, Piezoelectric polarization.
Citation
H. P. BHADANE, E. P. SAMUEL, D. S. PATIL, Investigation of optical gain in ZnO/MgZnO quantum well incorporating piezoelectric polarization, Optoelectronics and Advanced Materials - Rapid Communications, 3, 3, March 2009, pp.200-203 (2009).
Submitted at: Jan. 30, 2009
Accepted at: March 19, 2009