Interaction between nanoparticles during chemical mechanical polishing (CMP)
F. ILIE1,*
,
C. TITA2
Affiliation
- Department of Machine Elements and Tribology, Polytechnic University of Bucharest, Spl. Independentei 313, 060042 Bucharest – Romania
- School Group «G-ral Magheru» Way of Traian 43, 240011 Rm-Valcea – Romania
Abstract
Nanoparticles have been widely used in polish slurries such as those in the Chemical Mechanical Polishing (CMP)
process. For understanding the mechanisms of CMP, an Atomic Force Microscope (AFM) is used to characterize
polished surfaces after a set of polishing experiments. To optimize the CMP polishing process, one needs to get
information on the interaction between the abrasive slurry particles and the surface being polished. CMP slurry of the
solid surfaces is slurry with large particle size colloidal silica nanoabrasive. Silica sol nanoabrasives with large particle
are prepared and characterized by Transmission Electron Microscopy (TEM), Particles Colloidal Size (PCS) and Zeta
potential in this paper. Results show that the silica sol nanoabrasives about 100 nm are of higher stability (Zeta potential
is -65 mV) and narrow distribution of particle size. Then alkali CMP slurries for the solid surfaces containing self-made
silica sol nanoabrasives are prepared and applied. The movement of nanoparticles in liquid and the interaction between
nanoparticles and solid surfaces are very important to obtain an atomic alloy smooth surface in the CMP process. We
investigate the nanoparticle adhesion and removal processes during CMP and post-CMP cleaning. The mechanical
interaction between particles and the wafer surface was studied using a microcontact wear model. This model considers
the particle effects between the polishing interfaces during load balancing. Experimental results on polishing and
cleaning are compared with numerical analysis. This paper suggests that during post-CMP cleaning, a combined effort in
chemical and mechanical interaction (tribochemical interactions) would be effective in removal of small particles during
cleaning. For large particles, more mechanical forces would be more effective. CMP results show that the removal rate
has been improved to 367 nm/min and RMS of roughness has been reduced.
Keywords
CMP, Nanoparticle adhesion, Substrate surface, Colloidal silica, Polish slurry.
Citation
F. ILIE, C. TITA, Interaction between nanoparticles during chemical mechanical polishing (CMP), Optoelectronics and Advanced Materials - Rapid Communications, 3, 3, March 2009, pp.245-248 (2009).
Submitted at: Feb. 20, 2009
Accepted at: March 19, 2009