Our site saves small pieces of text information (cookies) on your device in order to deliver better content and for statistical purposes. You can disable the usage of cookies by changing the settings of your browser. By browsing our site without changing the browser settings you grant us permission to store that information on your device.
LINFENG LU1, HONGLIE SHEN1,* , HUI ZHANG1, FENG JIANG1, BINBIN LI1, LONG LIN1
Transparent conductive Al doped ZnO (AZO) thin films were deposited by radio frequency magnetron sputtering method. Using XRD rocking curves measurement, it is found that at a substrate temperature of 300 °C, the AZO has the best crystal quality. The influence of argon flow rate on growth rate, the electrical and optical properties of the AZO films prepared at 300 °C was investigated by surface profilometer, Hall measurement and UV-vis spectrometer. With increasing the argon flow rate, the growth rate decreases while the carrier concentration of the AZO films increases. Resistivity of the films presents a minimum value of 4.35×10-4 Ω·cm at the argon flow rate of 20 sccm. AZO thin film grown at this optimal Ar flow rate shows the highest Hall mobility of 31.2 cm2/V⋅s and the highest average optical transmittance of 81.6% in the 400-800 nm range..
AZO, Magnetron sputtering, Ar flow rate, Electrical properties.
LINFENG LU, HONGLIE SHEN, HUI ZHANG, FENG JIANG, BINBIN LI, LONG LIN, Effects of Ar flow rate and substrate temperature on the properties of AZO thin films by RF magnetron sputtering, Optoelectronics and Advanced Materials - Rapid Communications, 4, 4, April 2010, pp.596-600 (2010).
Submitted at: March 21, 2010
Accepted at: April 11, 2010
Optoelectronics and Advanced Materials - Rapid Communications
(2025): Impact Factor = 0.5 - Journal Citation Reports (Clarivate Analytics, 2026)
Active accounts were imported to the new platform and assigned a random password by default. In order to access your account you need to access the login page and go through the Lost Password dialog (involves the system sending you an email with instructions) in order to reset your password. This step is necessary as passwords are kept in hashed form and the new platform uses modern hashing algorithms incompatible with the previous ones.