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Characterization of series resistance in the Sn/p-InP Schottky barrier diodes using temperature dependent C-V,G/w and DLTS

D. KORUCU1,* , Ş. ALTINDAL1, T. S. MAMMADOV2, S. ÖZÇELIK1

Affiliation

  1. Physics Department, Faculty of Arts and Sciences, Gazi University, 06500, Ankara, Turkey
  2. National Academy of Science, Institute of Physics, Baku, Azerbaijan

Abstract

The temperature dependence of capacitance-voltage (C-V) and conductance-voltage (G/w-V) characteristics and DLTS measurements of Sn/p-InP Schottky barrier diode (SBDs) have been investigated in the temperature range of 80-400 K at 1 MHz. Experimental results show that both the C-V and Rs-V plots exhibit a peak, and this peak positions shift toward positive bias voltage with increasing temperature. The C-V and G/w-V characteristics show that the interface states (Nss) and series resistance (Rs) are strongly influence the electrical parameters of the Sn/p-InP (SBD). Also, Deep level transient spectroscopy (DLTS) measurement has been performed to investigate defects in bulk p-type InP doped with Zn.

Keywords

Sn/p-InP Schottky barrier diode, Interface states, Series resistance, Characteristics trap parameters.

Citation

D. KORUCU, Ş. ALTINDAL, T. S. MAMMADOV, S. ÖZÇELIK, Characterization of series resistance in the Sn/p-InP Schottky barrier diodes using temperature dependent C-V,G/w and DLTS, Optoelectronics and Advanced Materials - Rapid Communications, 3, 3, March 2009, pp.171-174 (2009).

Submitted at: Jan. 19, 2009

Accepted at: March 19, 2009