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H. METIN1,* , S. ERAT1, M. ARI2, M. BOZOKLU2
The optical, structural and electrical properties of Cadmium Selenide (CdSe) thin films were deposited by a simple and inexpensive method, chemical bath deposition (CBD), have been investigated. The optical measurements have been obtained by using the UV-Visible spectrophotometer and the optical band gap energy (Eg) was calculated from the absorption spectra as 1.83 eV and 1.76 eV for the chemically deposited CdSe thin films at 60 °C and 70 °C, respectively. The samples were characterized by using the X-ray diffraction method, the scanning electron microscope (SEM) and the energy dispersive X-ray analysis (EDX). The grain size of the films depend on the annealing temparature and is situated in the range 86 - 820 Å from X-ray analysis. The electrical resistivity and conductivity of the CdSe films have been determined by using four-point probe technique in the temperature range between 310–640 K. The electrical resistivities were found in the order of 106 Ω-cm at room temperature and in order of 104 Ω-cm at 640 K. The activation energy was found to be about 0.27 eV - 0.41 eV and the temperature coefficient of electrical resistivity was found to be about -3.04x10-3 K-1 and -3.27x10-3 K-1 for room temperature and 640 K, respectively.
Characterization, Thin film, CdSe, Four-point probe method.
H. METIN, S. ERAT, M. ARI, M. BOZOKLU, Characterization of CdSe films prepared by chemical bath deposition method, Optoelectronics and Advanced Materials - Rapid Communications, 2, 2, February 2008, pp.92-98 (2008).
Submitted at: Jan. 24, 2008
Accepted at: Feb. 11, 2008
Optoelectronics and Advanced Materials - Rapid Communications
(2025): Impact Factor = 0.5 - Journal Citation Reports (Clarivate Analytics, 2026)
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