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Analytical modeling and ATLAS simulation of N+-Hg0.69 Cd0.31Te /n0- Hg0.78 Cd0.22Te/p+Hg0.78 Cd0.22Te p-i-n photodetector for long wavelength free space optical communication

A. D. D. DWIVEDI1, P. CHAKRABARTI1,*

Affiliation

  1. Centre for Research in Microelectronics, Department of Electronics Engineering Institute of Technology, Banaras Hindu University, Varanasi-221005 India

Abstract

In this paper we report an analytical modeling of N+-Hg0.69 Cd0.31Te /n0 Hg0.78 Cd0.22Te /p+-Hg0.78 Cd0.22Te p-i-n photodetector for long wavelength free space optical communication. The results obtained on the basis of our model have been compared and contrasted with the simulated results using ATLASTM. The photodetector has been studied in respect of energy band diagram, electric field profile, doping profile, dark current, resistance area-product, quantum efficiency, spectral response, responsivity and detectivity by analytical method using closed form equations and also been simulated by using device simulation software ATLASTM from SILVACO® international. The photodetector exhibits a high value of quantum efficiency ~80 %, responsivity ~7 A/W, specific detectivity ~3.44×1011 mHz1/2W-1at wavelength10.6μm, dark current of the order of 10-11 A. The estimated noise equivalent power (NEP) is the order of 3×10-18 W..

Keywords

ATLAS simulation, p-i-n photodetector, Optical communication, Hg-Cd-Te.

Citation

A. D. D. DWIVEDI, P. CHAKRABARTI, Analytical modeling and ATLAS simulation of N+-Hg0.69 Cd0.31Te /n0- Hg0.78 Cd0.22Te/p+Hg0.78 Cd0.22Te p-i-n photodetector for long wavelength free space optical communication, Optoelectronics and Advanced Materials - Rapid Communications, 4, 4, April 2010, pp.480-497 (2010).

Submitted at: Sept. 21, 2009

Accepted at: April 11, 2010