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RAMESH RATHINAM1,*
In this paper, we explore and compare the optical properties of a few layer black phosphorus double gate MOSFET (DGMOSFET) photodetector operating in the near infrared (212-400 THz). The study uses a hybrid simulation approach that combines QuantumWise ATK and Sentaurus TCAD. The photodetector's drain current, electric field, threshold voltage, electron concentration, and electron mobility are calculated. Other photodetector parameters have been calculated, including sensitivity, responsivity, quantum efficiency, and signal-to-noise ratio (S/N). The few layer BP-DGMOSFET has greater performance, including a larger Ion (4.5 x 10-3), high sensitivity, responsivity and quantum efficiency.
Phosphorene, Photodetector, Noise analysis, Hybrid method.
RAMESH RATHINAM, Analysis of black phosphorus double gate MOSFET (BP-DGMOSFET) photodetector in the near infrared region, Optoelectronics and Advanced Materials - Rapid Communications, 20, 9-10, September-October 2026, pp.451-460 (2026).
Submitted at: Jan. 30, 2026
Accepted at: Oct. 5, 2026
Optoelectronics and Advanced Materials - Rapid Communications
(2025): Impact Factor = 0.5 - Journal Citation Reports (Clarivate Analytics, 2026)
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