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NURAY ÇELEBI1,*
A simple, single, new and an accurate CAD model is proposed for a type of semiconductor laser diode based on radial basis function network (RBFN). The single model easily computes the values of the critical quantities according to their operating wavelengths and injection currents which are differential modal gain, differential refractive index change and Alpha (α) parameter (linewidth enhancement factor, LEF). The computation time is tremendously reduced by the model and it can be used to evaluate the general system response at the design stage. The model results are considerably wellmatched with the previously obtained experimental values..
Quantum cascade lasers, Optimization, Radial basis function network, Modelling.
NURAY ÇELEBI, An accurate single CAD model based on radial basis function network, Optoelectronics and Advanced Materials - Rapid Communications, 4, 4, April 2010, pp.498-501 (2010).
Submitted at: Feb. 22, 2010
Accepted at: April 11, 2010
Optoelectronics and Advanced Materials - Rapid Communications
(2025): Impact Factor = 0.5 - Journal Citation Reports (Clarivate Analytics, 2026)
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